爱普生晶振SG-8018系列编码X1G005601001900可编程晶振支持CMOS电平输出
爱普生晶振SG-8018系列,是CMOS输出的可编程晶振系列。
虽然这一系列提供了与早期类似的频率和其它参数的同样容易的可编程性
SG-8002/SG-8003系列还具有更宽的工作温度范围,最大限值为105℃。除了2.5x2.0mm封装有助于电子制造商节省电路板空间之外,这些晶体振荡器还提供以下常见封装尺寸:3.2x2.5mm、5.0x3.2mm和7.0x5.0mm。SG-8018系列中的振荡器具有约66%的频率容差和电流消耗比同类产品低50%,可在各种环境条件下使用。这也将大大有助于提高性能、降低功耗要求、缩短开发周期和实现小批量生产。
爱普生晶振SG-8018系列编码X1G005601001900可编程晶振支持CMOS电平输出
爱普生晶振 | Model | Frequency | LxWxH | Output Wave | Supply Voltage | Ope Temperature |
X1G005601001100 | SG-8018CG | 25.000000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C |
X1G005601001200 | SG-8018CG | 25.000000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C |
X1G005601001300 | SG-8018CG | 20.000000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C |
X1G005601001400 | SG-8018CG | 20.000000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C |
X1G005601001500 | SG-8018CG | 50.000000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C |
X1G005601001600 | SG-8018CG | 50.000000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C |
X1G005601001700 | SG-8018CG | 48.000000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C |
X1G005601001800 | SG-8018CG | 48.000000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C |
X1G005601001900 | SG-8018CG | 24.000000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C |
X1G005601002000 | SG-8018CG | 24.000000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C |
X1G005601002100 | SG-8018CG | 40.000000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C |
X1G005601002200 | SG-8018CG | 40.000000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C |
X1G005601002300 | SG-8018CG | 16.000000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C |
X1G005601002400 | SG-8018CG | 16.000000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C |
X1G005601002500 | SG-8018CG | 12.000000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C |
X1G005601002600 | SG-8018CG | 12.000000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C |
X1G005601002700 | SG-8018CG | 10.000000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C |
X1G005601002800 | SG-8018CG | 10.000000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C |
X1G005601002900 | SG-8018CG | 27.000000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C |
X1G005601003000 | SG-8018CG | 27.000000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C |
X1G005601003100 | SG-8018CG | 32.000000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C |
X1G005601003200 | SG-8018CG | 32.000000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C |
X1G005601003300 | SG-8018CG | 8.000000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C |
X1G005601003400 | SG-8018CG | 8.000000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C |
X1G005601003500 | SG-8018CG | 14.745600 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C |
X1G005601003600 | SG-8018CG | 14.745600 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C |
X1G005601003700 | SG-8018CG | 12.288000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C |
X1G005601003800 | SG-8018CG | 12.288000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C |
X1G005601003900 | SG-8018CG | 33.000000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C |
X1G005601004000 | SG-8018CG | 33.000000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C |
X1G005601004100 | SG-8018CG | 30.000000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C |
X1G005601004200 | SG-8018CG | 30.000000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C |
X1G005601004300 | SG-8018CG | 26.000000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C |
X1G005601004400 | SG-8018CG | 26.000000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C |
X1G005601004500 | SG-8018CG | 24.576000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C |
X1G005601004600 | SG-8018CG | 24.576000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C |
X1G005601004700 | SG-8018CG | 100.000000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C |
特征:
晶体振荡器(可编程)
输出频率:0.67MHz至170MHz (1x10-6步进)
输出:CMOS
电源电压:1.62V至3.63V
频率容差、工作温度:50×10-6/-40℃至+105℃,包括频率老化(+25℃,10年)
可编程晶振实为有源晶振,石英可编程(Q MEMS)具有高稳定、高精度等优越性能的石英材料[QUARTZ]和[MEMS]组合而成的造词,以石英为原料进行精微加工(光刻)并可以提供的小型化、高性能的晶体元器件被称为[Q MEMS]。
石英可编程晶振广泛应用于5G通讯、工业控制、车载、消费电子、光电技术及各种变频调速设备等通讯设备。
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