Abracon开发了分别为2.0x1.2x0.6毫米和3.2x1.5x0.9毫米的ABS06W和ABS07W系列音叉晶体时,为了实现最佳的电路内性能,Abracon优化了电极图案,以减少C0的总体影响,使得2.0x1.2x0.6mm封装的最大保证(电极+封装)电容为2.0pF,石英晶振3.2x1.5x0.9mm封装的最高保证电容为1.30pF。凭借革命性的坯料设计和加工技术,Abracon能够大幅降低这些解决方案的ESR,工作温度范围为-40°C至+125°C;同时将电镀负载降低到行业领先的3.0pF。
特征:3.0pF的极低电镀负载,是可穿戴设备的理想选择,无线和物联网应用,在延长运行期间同时优化ESR,小体积无源晶振3.2x1.5x0.9mm SMD封装,非常适合空间受限设计,可提供±10 ppm的设定公差,接缝密封包装,具有长期可靠性
应用于:可穿戴设备,无线模块,物联网(IoT),蓝牙/蓝牙低能耗(BLE),机器对机器(M2M)连接,超低功耗MCU,近场通信(NFC),ISM频段应用,超低功耗节能MCU。
原厂编码
品牌
型号
系列
频率
包装/封装
ABS07W-32.768KHZ-D-1-T
Abracon晶振
ABS07W
kHz Crystal (Tuning Fork)
32.768kHz
2-SMD, No Lead
ABS07W-32.768KHZ-D-2-T
Abracon晶振
ABS07W
kHz Crystal (Tuning Fork)
32.768kHz
2-SMD, No Lead
ABS07W-32.768KHZ-J-2-T
Abracon晶振
ABS07W
kHz Crystal (Tuning Fork)
32.768kHz
2-SMD, No Lead
ABS07W-32.768KHZ-J-1-T
Abracon晶振
ABS07W
kHz Crystal (Tuning Fork)
32.768kHz
2-SMD, No Lead
ABS07W-32.768KHZ-K-2-T
Abracon晶振
ABS07W
kHz Crystal (Tuning Fork)
32.768kHz
2-SMD, No Lead
ABS07W-32.768KHZ-K-1-T
Abracon晶振
ABS07W
kHz Crystal (Tuning Fork)
32.768kHz
2-SMD, No Lead
ABS07-32.768KHZ-T
Abracon晶振
ABS07
kHz Crystal (Tuning Fork)
32.768kHz
2-SMD, No Lead
ABS07-120-32.768KHZ-T
Abracon晶振
ABS07
kHz Crystal (Tuning Fork)
32.768kHz
2-SMD, No Lead
ABS07-32.768KHZ-7-T
Abracon晶振
ABS07
kHz Crystal (Tuning Fork)
32.768kHz
2-SMD, No Lead
ABS07-32.768KHZ-9-T
Abracon晶振
ABS07
kHz Crystal (Tuning Fork)
32.768kHz
2-SMD, No Lead
ABS07-32.768KHZ-7-1-T
Abracon晶振
ABS07
kHz Crystal (Tuning Fork)
32.768kHz
2-SMD, No Lead
ABS07-32.768KHZ-9-1-T
Abracon晶振
ABS07
kHz Crystal (Tuning Fork)
32.768kHz
2-SMD, No Lead
ABS07-32.768KHZ-6-T
Abracon晶振
ABS07
kHz Crystal (Tuning Fork)
32.768kHz
2-SMD, No Lead
ABS10-32.768KHZ-T
Abracon晶振
ABS10
kHz Crystal (Tuning Fork)
32.768kHz
2-SMD, No Lead
ABS10-32.768KHZ-7-T
Abracon晶振
ABS10
kHz Crystal (Tuning Fork)
32.768kHz
2-SMD, No Lead
ABS10-32.768KHZ-9-T
Abracon晶振
ABS10
kHz Crystal (Tuning Fork)
32.768kHz
2-SMD, No Lead
ABS07-32.768KHZ-1-T
Abracon晶振
ABS07
kHz Crystal (Tuning Fork)
32.768kHz
2-SMD, No Lead
ABS09-32.768KHZ-9-T
Abracon晶振
ABS09
kHz Crystal (Tuning Fork)
32.768kHz
2-SMD, No Lead
Abracon的石英晶体提供低ESR规格和低CL选项,以应对节能MCU和便携式通信芯片组市场趋势。为了支持这种功耗降低,许多片内振荡器的输出驱动有限,使用ESR & CL规格更高的标准石英晶体往往无法维持振荡。Abracon的W系列石英晶体专为微功率应用而设计,可克服这些挑战。ABS07W-32.768KHZ-J-2-T音叉晶体可实现最佳的电路内性能
ABS07W-32.768KHZ-J-2-T音叉晶体可实现最佳的电路内性能,Abracon采用了独特的生产调整技术,在室温下收紧设定公差和ESR分布。Abracon使这些溶液的ESR值最小化的能力;同时将电镀负载降低到行业领先的3.0pF。需要注意的是,大多数消费市场/物联网终端解决方案的工作温度范围为-20°C至+70°C。在这个较窄的工作范围内,贴片晶振ABS06W和ABS07W设备提供异常低的ESR值;利用当今的节能硅进一步提高了incrcuit增益幅度。Abracon已采取措施确保在-40°C至+125°C的整个工作温度范围内达到最先进的ESR性能,并且是唯一一家在更宽的工作温度范围确保ESR性能值的OEM。
ABS09-32.768KHZ-T
Abracon晶振
ABS09
kHz Crystal (Tuning Fork)
32.768kHz
2-SMD, No Lead
ABS10-32.768KHZ-1-T
Abracon晶振
ABS10
kHz Crystal (Tuning Fork)
32.768kHz
2-SMD, No Lead
ABS09-32.768KHZ-7-T
Abracon晶振
ABS09
kHz Crystal (Tuning Fork)
32.768kHz
2-SMD, No Lead
ABS09-32.768KHZ-1-T
Abracon晶振
ABS09
kHz Crystal (Tuning Fork)
32.768kHz
2-SMD, No Lead
ABS07-32.768KHZ-4-T
Abracon晶振
ABS07
kHz Crystal (Tuning Fork)
32.768kHz
2-SMD, No Lead
ABS10-32.768KHZ-4-T
Abracon晶振
ABS10
kHz Crystal (Tuning Fork)
32.768kHz
2-SMD, No Lead
ABS09-32.768KHZ-4-T
Abracon晶振
ABS09
kHz Crystal (Tuning Fork)
32.768kHz
2-SMD, No Lead
ABS25-32.768KHZ-T
Abracon晶振
ABS25
kHz Crystal (Tuning Fork)
32.768kHz
4-SOJ, 5.50mm pitch
ABS25-32.768KHZ-6-T
Abracon晶振
ABS25
kHz Crystal (Tuning Fork)
32.768kHz
4-SOJ, 5.50mm pitch
ABS25-32.768KHZ-1-T
Abracon晶振
ABS25
kHz Crystal (Tuning Fork)
32.768kHz
4-SOJ, 5.50mm pitch
ABS25-32.768KHZ-6-1-T
Abracon晶振
ABS25
kHz Crystal (Tuning Fork)
32.768kHz
4-SOJ, 5.50mm pitch
ABS25-32.768KHZ-4-T
Abracon晶振
ABS25
kHz Crystal (Tuning Fork)
32.768kHz
4-SOJ, 5.50mm pitch
ABS25-32.000KHZ-T
Abracon晶振
ABS25
kHz Crystal (Tuning Fork)
32kHz
4-SOJ, 5.50mm pitch
ABS25-38.000KHZ-T
Abracon晶振
ABS25
kHz Crystal (Tuning Fork)
38kHz
4-SOJ, 5.50mm pitch
ABS25-60.000KHZ-T
Abracon晶振
ABS25
kHz Crystal (Tuning Fork)
60kHz
4-SOJ, 5.50mm pitch
ABS25-100.000KHZ-T
Abracon晶振
ABS25
kHz Crystal (Tuning Fork)
100kHz
4-SOJ, 5.50mm pitch
Abracon晶振还认识到需要采用这些设计、工艺和生产技术,并成功实施了这些技术,以在MHz范围内提供广泛的物联网优化石英晶体。Abracon能够以行业领先的4.0 pF电镀电容电镀这些解决方案,同时保持最低可能值的ESR确保这些解决方案不仅与当今的解决方案完美匹配,22nm或14nm FinFET技术,但更重要的是,经过优化以确保最佳性能,在不久的将来,包括5nm节点在内的下一代解决方案。