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Microchip晶振DSC613系列3路输出低功耗MEMS时钟振荡器DSC613RI3A-010UT

2022-08-04 08:58:54 泰河电子

Microchip的目标是提供最好的电子元器件,价值和支持,以降低风险并简化产品上市时间。生产的有源晶振具备优异的抗氧化性,不仅可以耐高温而且更耐低温,高标准的性能是Microchip Technology Inc.最突出的产品特点。

我们的多输出和高度灵活的基于石英和MEMS的PureSilicon™ 晶体振荡器采用各种行业标准封装,可满足您的低功耗或低抖动应用的要求。使用我们的Clockworks®配置器和采样工具可以轻松地将您的振荡器定制为频率、温度、ppm和封装尺寸的任意组合,以满足您的应用要求

Microchip晶振DSC613系列3路输出低功耗MEMS时钟振荡器DSC613RI3A-010UT

DSC1123CI2-125.0000 Microchip Technology Tube DSC1123 Active MEMS (Silicon) 125MHz
DSC1123CI2-200.0000 Microchip Technology Tube DSC1123 Active MEMS (Silicon) 200MHz
DSC1123AE2-100.0000 Microchip Technology Tube DSC1123 Active MEMS (Silicon) 100MHz
DSC1001CI2-027.0000 Microchip Technology Tube DSC1001 Active MEMS (Silicon) 27MHz
DSC1123CE1-156.2500 Microchip Technology Tube DSC1123 Active MEMS (Silicon) 156.25MHz
DSC1123CI2-150.0000 Microchip Technology Tube DSC1123 Active MEMS (Silicon) 150MHz
DSC1123CI2-100.0000 Microchip Technology Tube DSC1123 Active MEMS (Silicon) 100MHz
DSC1103DI2-312.5000 Microchip Technology Tube DSC1103 Active MEMS (Silicon) 312.5MHz
DSC1123DI2-050.0000 Microchip Technology Tube DSC1123 Active MEMS (Silicon) 50MHz
DSC1123CI2-156.2500 Microchip Technology Tube DSC1123 Active MEMS (Silicon) 156.25MHz
DSC1123BL2-125.0000 Microchip Technology Tube DSC1123 Active MEMS (Silicon) 125MHz
DSC1123CI5-125.0000 Microchip Technology Tube DSC1123 Active MEMS (Silicon) 125MHz
DSC1103CI5-300.0000 Microchip Technology Tube DSC1103 Active MEMS (Silicon) 300MHz
DSC1123DL5-200.0000 Microchip Technology Tube DSC1123 Active MEMS (Silicon) 200MHz
DSC1123NL5-100.0000 Microchip Technology Tube DSC1123 Active MEMS (Silicon) 100MHz
MX574BBD322M265 Microchip Technology Tube MX57 Active XO (Standard) 322.265625MHz
DSC1001CI2-018.4320 Microchip Technology Tube DSC1001 Active MEMS (Silicon) 18.432MHz
DSC1123CI1-200.0000 Microchip Technology Tube DSC1123 Active MEMS (Silicon) 200MHz
DSC1123CI1-156.2500 Microchip Technology Tube DSC1123 Active MEMS (Silicon) 156.25MHz
DSC1123AE2-300.0000 Microchip Technology Tube DSC1123 Active MEMS (Silicon) 300MHz
DSC1123AI1-125.0000 Microchip Technology Tube DSC1123 Active MEMS (Silicon) 125MHz
DSC1123AI2-125.0000 Microchip Technology Tube DSC1123 Active MEMS (Silicon) 125MHz
DSC1122CE1-125.0000 Microchip Technology Tube DSC1122 Active MEMS (Silicon) 125MHz
DSC1123AE2-200.0000 Microchip Technology Tube DSC1123 Active MEMS (Silicon) 200MHz

DSC613是一款MEMS振荡器,低功耗、超小型器件 无晶体时钟发生器系列。DSC613系列是工厂可配置的,可产生来自两个PLL的多达三路LVCMOS输出。每个输出可配置为从以下频率产生2kHz至100MHz。

DSC613提供低抖动和在宽电源范围内的高稳定性 电压和温度。通过消除外部的石英晶体,微芯片的无晶体时钟 发电机显著提高了可靠性 加速产品开发。

DSC613有一个控制输入,可以是配置为输出使能/禁用, 待机、睡眠、扩频使能和 频率选择。DSC613可在太空中使用节省6针、1.6x1.2mm、2.0x1.6mm和2.5x2.0mm VFLGA塑料封装。DSC613扩频功能包括两者居中向下展开,将在中进一步解释扩频部分。DSC613是一款高度可配置的器件 工厂编程以满足客户的需求。

DSC613系列器件是业界最小的MEMS时钟发生器,可替代板上最多三个晶体和振荡器,从而将时序元件板空间减少多达 80%。时钟发生器通过集成低功率和高稳定性的微机电系统 (MEMS)谐振器,无需外部晶体。该系列包括两个低功耗分数 PLL,可提供领先的频率灵活性和稳健的抖动性能。客户可以配置输出频率、控制引脚功能、封装尺寸、PPM 精度和温度范围。根据自定义电路板负载条件,最多可提供三种输出驱动强度。扩频时钟也可用于降低 EMI。DSC613是一款高度可配置的器件,出厂时已编程以满足客户的需求

Microchip晶振DSC613系列3路输出低功耗MEMS时钟振荡器DSC613RI3A-010UT

DSC1103CI1-075.0000 Microchip Technology Tube DSC1103 Active MEMS (Silicon) 75MHz
DSC1123AI2-150.0000 Microchip Technology Tube DSC1123 Active MEMS (Silicon) 150MHz
DSC1123AI1-200.0000 Microchip Technology Tube DSC1123 Active MEMS (Silicon) 200MHz
DSC557-0344SI1 Microchip Technology Tube DSC557-03 Active MEMS (Silicon) 100MHz
DSC6003CI1A-033.0000 Microchip Technology Bulk DSC60XX Active MEMS (Silicon) 33MHz
DSC6111CI1A-008.0000 Microchip Technology Bulk DSC6100 Active MEMS (Silicon) 8MHz
DSC6011JI1A-024.0000 Microchip Technology Bulk DSC60XX Active MEMS (Silicon) 24MHz
DSC6083CI2A-032K800 Microchip Technology Bulk DSC60XX Active MEMS (Silicon) 32.8kHz
DSC6083CI2A-307K000 Microchip Technology Bulk DSC60XX Active MEMS (Silicon) 307kHz
DSC6001CI2A-004.0000 Microchip Technology Tube DSC60XX Active MEMS (Silicon) 4MHz
DSC6001CI2A-032.0000 Microchip Technology Tube DSC60XX Active MEMS (Silicon) 32MHz
DSC6083CI2A-250K000 Microchip Technology Bulk DSC60XX Active MEMS (Silicon) 250kHz
DSC6083CI2A-002K000 Microchip Technology Bulk DSC60XX Active MEMS (Silicon) 2kHz
DSC6101JI2A-024.0000 Microchip Technology Bulk DSC6100 Active MEMS (Silicon) 24MHz
DSC1001CC1-047.3333 Microchip Technology Tube DSC1001 Active MEMS (Silicon) 47.3333MHz
DSC1030BC1-008.0000 Microchip Technology Tube DSC1030 Active MEMS (Silicon) 8MHz
DSC1001BC1-024.0000 Microchip Technology Tube DSC1001 Active MEMS (Silicon) 24MHz
DSC1033BC1-026.6000 Microchip Technology Tube DSC1033 Active MEMS (Silicon) 26MHz
DSC1001DI1-001.8432 Microchip Technology Tube DSC1001 Active MEMS (Silicon) 1.8432MHz
DSC1033CI1-048.0000 Microchip Technology Tube DSC1033 Active MEMS (Silicon) 48MHz
DSC1033CI1-024.0000 Microchip Technology Tube DSC1033 Active MEMS (Silicon) 24MHz
DSC1033DI1-012.0000 Microchip Technology Tube DSC1033 Active MEMS (Silicon) 12MHz
DSC1033DI1-036.0000 Microchip Technology Tube DSC1033 Active MEMS (Silicon) 36MHz

Microchip晶振DSC613系列3路输出低功耗MEMS时钟振荡器DSC613RI3A-010UT

特征:

基于MEMS的时钟发生器消除了需要外部晶振或参考时钟
三个LVCMOS输出时钟:2kHz至100MHz
低功耗:5.2 mA(所有输出活动)
宽电源电压范围:1.71V至3.63V
超小型封装尺寸:1.6x1.2mm,2.0x1.6mm,2.5x2.0mm
高频稳定性:20 ppm、25 ppm、50ppm有源晶振
宽温度范围:
-汽车:–40至+125
-分机。工业级:–40℃至+105℃
-工业级:–40℃至+85℃
-商用:–20℃至+70℃
出色的抗冲击和振动能力:
-冲击:符合MIL-STD-883E方法
2002.3,测试条件G (30,000克)
-振动:符合MIL-STD-883E方法
2007.2,试验条件C(70克)
高可靠性
无铅且符合RoHS标准
提供汽车选项AEC-Q100

灵活的控制功能:输出使能、待机、睡眠、频率选择、扩频使能
支持 3 路输出驱动强度和扩频时钟以降低 EMI
出色的抗冲击和抗振动能力

DSC1001CI1-027.0000 Microchip Technology Tube DSC1001 Active MEMS (Silicon) 27MHz
DSC1033CI1-050.0000 Microchip Technology Tube DSC1033 Active MEMS (Silicon) 50MHz
DSC6001CI1A-011.0592 Microchip Technology Tube DSC60XX Active MEMS (Silicon) 11.0592MHz
DSC1001CI2-024.0000 Microchip Technology Tube DSC1001 Active MEMS (Silicon) 24MHz
DSC1033BE2-024.0000 Microchip Technology Tube DSC1033 Active MEMS (Silicon) 24MHz
DSC1001DI2-038.4000 Microchip Technology Tube DSC1001 Active MEMS (Silicon) 38.4MHz
DSC1001CI5-033.3333 Microchip Technology Tube DSC1001 Active MEMS (Silicon) 33.3333MHz
DSC1101DM2-012.0000 Microchip Technology Tube DSC1101 Active MEMS (Silicon) 12MHz
DSC1001DE5-018.4320 Microchip Technology Tube DSC1001 Active MEMS (Silicon) 18.432MHz
DSC1101AI2-040.0000 Microchip Technology Tube DSC1101 Active MEMS (Silicon) 40MHz
DSC1101AI2-080.0000 Microchip Technology Tube DSC1101 Active MEMS (Silicon) 80MHz
DSC1101AI2-064.0000 Microchip Technology Tube DSC1101 Active MEMS (Silicon) 64MHz
DSC1124CI5-100.0000 Microchip Technology Tube DSC1124 Active MEMS (Silicon) 100MHz
DSC1121CM2-040.0000 Microchip Technology Tube DSC1121 Active MEMS (Silicon) 40MHz
DSC1101DL5-020.0000 Microchip Technology Tube DSC1101 Active MEMS (Silicon) 20MHz
DSC1101BI5-133.0000 Microchip Technology Tube DSC1101 Active MEMS (Silicon) 133MHz
DSC1101CL5-100.0000 Microchip Technology Tube DSC1101 Active MEMS (Silicon) 100MHz
DSC1122NE1-025.0000 Microchip Technology Tube DSC1122 Active MEMS (Silicon) 25MHz
DSC1123CE1-125.0000 Microchip Technology Tube DSC1123 Active MEMS (Silicon) 125MHz
DSC1122DI2-200.0000 Microchip Technology Tube DSC1122 Active MEMS (Silicon) 200MHz
DSC1123CI2-333.3333 Microchip Technology Tube DSC1123 Active MEMS (Silicon) 333.3333MHz
DSC1123CI2-020.0000 Microchip Technology Tube DSC1123 Active MEMS (Silicon) 20MHz
DSC1103CE1-125.0000 Microchip Technology Tube DSC1103 Active MEMS (Silicon) 125MHz
DSC1123CI1-027.0000 Microchip Technology Tube DSC1123 Active MEMS (Silicon) 27MHz

Microchip晶振DSC613系列3路输出低功耗MEMS时钟振荡器DSC613RI3A-010UT

应用程序:低功耗/便携式应用:物联网,嵌入式/智能设备,消费者:家庭医疗保健、健身设备、家庭自动化,工业:建筑/工厂自动化,监控摄像头

作为具有百年历史的石英振荡器的颠覆性技术,基于微机电系统 (MEMS) 的振荡器近年来因其可靠性、交货时间短和封装尺寸小而获得了广泛的市场采用。作为这个快速增长的市场的领导者,我们可以帮助您确定满足您的计时需求的解决方案。我们提供业界最完整的基于 MEMS 的计时解决方案,其中包括可直接替代传统石英晶体振荡器的单输出振荡器和多输出时钟发生器,可为您的系统提供高度可靠和准确的参考时钟,而无需外部参考晶体。基于硅MEMS的计时设备具有高可靠性(包括用于汽车的 AEC-Q100 认证)、宽工作温度(-55至125℃)、出色的抗冲击和抗振性、高精度 (±10ppm) 和小尺寸 (1.6x1.2mm)。

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