爱普生晶振SG-8018系列编码X1G005601001900可编程晶振支持CMOS电平输出
爱普生晶振 | Model | Frequency | LxWxH | Output Wave | Supply Voltage | Ope Temperature |
X1G005601001100 | SG-8018CG | 25.000000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C |
X1G005601001200 | SG-8018CG | 25.000000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C |
X1G005601001300 | SG-8018CG | 20.000000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C |
X1G005601001400 | SG-8018CG | 20.000000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C |
X1G005601001500 | SG-8018CG | 50.000000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C |
X1G005601001600 | SG-8018CG | 50.000000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C |
X1G005601001700 | SG-8018CG | 48.000000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C |
X1G005601001800 | SG-8018CG | 48.000000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C |
X1G005601001900 | SG-8018CG | 24.000000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C |
X1G005601002000 | SG-8018CG | 24.000000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C |
X1G005601002100 | SG-8018CG | 40.000000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C |
X1G005601002200 | SG-8018CG | 40.000000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C |
X1G005601002300 | SG-8018CG | 16.000000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C |
X1G005601002400 | SG-8018CG | 16.000000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C |
X1G005601002500 | SG-8018CG | 12.000000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C |
X1G005601002600 | SG-8018CG | 12.000000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C |
X1G005601002700 | SG-8018CG | 10.000000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C |
X1G005601002800 | SG-8018CG | 10.000000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C |
X1G005601002900 | SG-8018CG | 27.000000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C |
X1G005601003000 | SG-8018CG | 27.000000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C |
X1G005601003100 | SG-8018CG | 32.000000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C |
X1G005601003200 | SG-8018CG | 32.000000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C |
X1G005601003300 | SG-8018CG | 8.000000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C |
X1G005601003400 | SG-8018CG | 8.000000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C |
X1G005601003500 | SG-8018CG | 14.745600 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C |
X1G005601003600 | SG-8018CG | 14.745600 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C |
X1G005601003700 | SG-8018CG | 12.288000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C |
X1G005601003800 | SG-8018CG | 12.288000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C |
X1G005601003900 | SG-8018CG | 33.000000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C |
X1G005601004000 | SG-8018CG | 33.000000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C |
X1G005601004100 | SG-8018CG | 30.000000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C |
X1G005601004200 | SG-8018CG | 30.000000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C |
X1G005601004300 | SG-8018CG | 26.000000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C |
X1G005601004400 | SG-8018CG | 26.000000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C |
X1G005601004500 | SG-8018CG | 24.576000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C |
X1G005601004600 | SG-8018CG | 24.576000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C |
X1G005601004700 | SG-8018CG | 100.000000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C |
特征:
晶体振荡器(可编程)
输出频率:0.67MHz至170MHz (1x10-6步进)
输出:CMOS
电源电压:1.62V至3.63V
频率容差、工作温度:50×10-6/-40℃至+105℃,包括频率老化(+25℃,10年)
可编程晶振实为有源晶振,石英可编程(Q MEMS)具有高稳定、高精度等优越性能的石英材料[QUARTZ]和[MEMS]组合而成的造词,以石英为原料进行精微加工(光刻)并可以提供的小型化、高性能的晶体元器件被称为[Q MEMS]。
石英可编程晶振广泛应用于5G通讯、工业控制、车载、消费电子、光电技术及各种变频调速设备等通讯设备。