KDS 晶振即是日本大真空株式会社（DASHINKU CORP）,成立于 1951 年,至今已有 50 多年的历史,是全球领先的三大晶振制造商之一,其制造工厂主要分布在日本本土、中国、泰国、印度尼西亚等十多个制造中心,KDS 大真空集团总公司位于日本兵库县加古川,在泰国,印度尼西亚,台湾,中国天津这些大城市均有生产工厂,其中天津工厂是全球晶振行业最大的单体制造工厂,也是全球最大的 TF 型晶振制造工厂.

首先非常的感谢你长期以来对【日本大真空株式会社】,KDS 晶振品牌的支持与厚爱.在此郑重声明,本集团以下简称（KDS）在中国的代理商除了北京中国电子研究院,广州电子研究所,【泰河电子】,香港 KDS办事处,台湾KDS办事处,是正规的代理销售企业,其余地区以及公司,个人所销售的KDS产品均不能保证是原装正品,请你选择正规渠道定制货品.

1XTV26000JBA|KDS晶振|株式会社大真空|VC-TCXO振荡器

1XTV26000JBA晶振产品尺寸图

1XTV26000JBA晶振产品电气表

关于1XTV26000JBA压控温补振荡器产品安装的注意事项

终端/陆上布局/金属屏蔽孔

1端子A通孔不在底部（安装侧）。
2土地图案布局/金属掩模孔以下土地图案为参考设计。电气特性应满足安装在这片土地上的要求。在测试用地和安装用地不相连的范围内，可以改变接地方式。

对电特性没有任何影响。面罩厚度建议为0.12毫米。

包装条件
胶带包装
（1）压花胶带格式及尺寸
（2）卷筒数量:最多2000个/卷
（3）胶带规格
不缺产品。
（4）卷筒规格见图3
包装
产品用防静电袋包装。
*湿度敏感度等级：IPC/JEDEC标准J-STD-033/1级
无需干燥包装，无需重新储存后烘烤。

包装箱
最多10卷/包装箱。但是，在少于10卷的情况下，它由任何盒子容纳。
盒子里的空间用垫子填满了。

1XXB26000MAA|KDS晶振|株式会社大真空|TCXO振荡器

1XXB26000MAA晶振产品尺寸图

1XXB26000MAA晶振产品电气表

关于1XXB26000MAA温补晶振产品安装的注意事项

终端/陆上布局/金属屏蔽孔

1端子A通孔不在底部（安装侧）。
2土地图案布局/金属掩模孔以下土地图案为参考设计。电气特性应满足安装在这片土地上的要求。在测试用地和安装用地不相连的范围内，可以改变接地方式。

对电特性没有任何影响。面罩厚度建议为0.12毫米。

包装条件
胶带包装
（1）压花胶带格式及尺寸
（2）卷筒数量:最多2000个/卷
（3）胶带规格
不缺产品。
（4）卷筒规格见图3
包装
产品用防静电袋包装。
*湿度敏感度等级：IPC/JEDEC标准J-STD-033/1级
无需干燥包装，无需重新储存后烘烤。

包装箱
最多10卷/包装箱。但是，在少于10卷的情况下，它由任何盒子容纳。
盒子里的空间用垫子填满了。

晶振振荡频率的较大差异(正侧或负侧的大振荡频率)意味着电路负载电容(由振荡电路电容器电容和基板杂散电容引起的电路电容)和晶体振荡器负载这意味着容量存在很大差异(晶体单元规格中描述的负载容量).

如何改善晶振振荡频率的差异,有两种方法可以改善振荡频率的差异(方法接近±0ppm),并且考虑到振荡电路的其他特性(负电阻,部落电平)来选择改进方法.

1、使电路负载容量更接近晶体振荡器负载容量的方法NDK晶振公司的基本方法是通过仅改变电路负载容量而不改变当前晶体振荡器负载容量来改善振荡频率的差异.

1C208000BC0U|KDS晶振|株式会社大真空|陶瓷面晶体

DIMENSIONS 尺寸外型图 

 Dimensions of embossed carrier tape  压花载带尺寸图 

Dimensions of tape reel   卷尺尺寸图 

石英晶体振荡器是用于生产振动的电路，由于振荡器的频率决定元件所包含的一个石英晶体振荡器，石英晶体振荡器可说服它们的频率精度和频率稳定性。实际上，这些电路经常被用作无线电，处理器和微控制的时钟。此外，大家可以在石英表中找到它们。因此石英和石英晶体振荡器被认为是数据传输和电信中频率控制的最重要组成部分，这也并不奇怪，因为它们的主要优点包括高谐振质量，大量振荡器选择和高频率性。

于对用于测量设备，卫星导航设备或者电信设备而言，由于价格敏感，振荡器的要注主要取决于频率，稳定性，外壳类型，输出信号和温度范围。例如，仪表，卫星导航设备或电信设备等专业应用对内置振荡器有更高的要求。包括具有良好的稳定性。低相位噪声和长寿命。为了实现这一点，所使用的石英还必须具有改进的老化性能，以实现相应的整体性能。为了最小化初始老化效应，所有振荡器都需要经历所谓的预老化过程，因此，只有在运行了几天后才能达到最终的稳定性。

KVG QUARTZ CRYSTAL TECHNOLOGY GMBH公司成立于1946年.在第二次世界大战结束后不久,物理学家库尔特·克林林创建了KVG公司. 不久后KVG公司就迁往内卡比绍夫斯海姆, 也就是现在KVG总公司所在地. 在1996年，KVG成为美国Dover有限公司在欧洲的晶体与晶体振荡器产品的合作伙伴。 1997年，晶体陶瓷在OCXOs和精准晶体的生产中被实际使用, 从而闻名世界. 

从2002年起,KVG再次成为独立公司. 新的公司领导者曼弗雷德·克利姆和格尔德克劳斯科夫先生都是在这行业具有多年的经验. 

以下是KVG晶振公司的发展历史。

KVG公司的发展史展现了晶体产品生产技术持续更新发展的过程：

· 1963 KVG使用合成晶体材料.

· 1964 研发和生产晶体滤波器.

· 1968 生产温度补偿晶振TCXOs.

· 1970 晶体生产中的直接溅镀.

· 1971 整块晶体滤波器的生产.

· 1972 生产凸面性晶体晶片.

· 1974 引进射线测量技术用于切割面角度的测定.

· 1979 以电脑为后台的晶体温度测定.

· 1981 以计算机为支持的TCXO的生产.

· 1983 KVG研发基于晶体的传感器和研发OCXOs.

· 1987 基于计算机控制的质量管理体系.

· 1988 SMD组件的自动装备机.

· 1993 622.08MHz的VCXOs.

· 1994 建立产品线，以HFF为晶体基座，最大振动频率达到200MHz.

· 1994 用SC-晶体生产OCXOs.

· 1995 使用镭射技术进行晶振的频率协调.

· 1997 生产 SMD OCXOs系列的 OCXO-6000.

· 1998 生产ASIC-TCXOs.

· 1999 用HFF晶体生产VCXOs.

· 2000 建立新生产，用于生产精准晶体的产品系列.

· 2002 KVG重塑独立实体.

· 2003 在晶体振荡器中使用电子谐频.

· 2005 设计出低相噪OCXO.

· 2007 设计出航天级的晶体.

· 2008 设计出航天级的晶体振荡器.

· 2009 建成新的生产设备.

· 2010 KVG重组了晶体和振荡器生产工厂.

· 2010 设计出抗冲击振动 OCXOs.

· 2011 空间晶体得到欧洲航天局的资格认证.

· 2013 以晶体振荡器XO和VCXO成为欧洲航天局的资格供应商.

· 2014 采用机械阻尼OCXO模块.

· 2015 设计出超低相躁RF-OCXO和抗冲击振动OCXO.

在恒温晶振的领域内的新设计，如提高抗冲击振动技术，新的RF TCXO和OCXO,使得在晶体和晶体振荡器的领域再次设定了标准.

凭借1965年雷达用精密晶体滤波器的基础，Mtronpti设计和制造了用于高可靠性和恶劣环境应用中的数据定时和射频频谱控制的射频和微波解决方案。Mtronpti成立于2004年，由M-tron Industries，Inc.收购Piezo Technology，Inc.，是LGL Group，Inc.的全资子公司。

在航空航天和国防市场，Mtronpti的数字调谐滤波器支持在存在电磁干扰的情况下进行安全通信。低漂移、高精度振荡器为地面、车辆、空中和卫星通信以及电子对抗提供可靠的频率锁定。抗振动和冲击的水晶钟使雷达图像更加清晰，并有助于监控商用飞机发动机的性能。

对于互联网通信，mtronpti晶振公司具有非常低的噪声和包同步时钟有助于增加带宽，防止蜂窝基站、micro和femto蜂窝以及Wi-Fi接入点的数据丢失。毫米波滤波器确保公司和电信的点对点链接保持无误。

在实验室工作台或消费电子产品生产测试台上，mtronpti超低噪声频率基准振荡器确保了准确的测量。当公共安全至关重要时，mtronpti宽温度范围/防水腔过滤器确保可靠的无线电通信。

卫星链路、相控阵雷达和抗IED干扰机使用mtronpti射频功率放大器将信号增强到天线。

Mtronpti晶振公司位于佛罗里达州奥兰多，在美国和印度制造业，在垂直方向上与基础材料科学、设计和制造方面的丰富经验相结合。凭借AS9100 C版和ISO 9001:2008全球认证、销售和支持，作为公认的服务领导者，MTronpti通过分销合作伙伴支持思科、雷神、爱立信、哈里斯、罗克韦尔柯林斯、联合技术航空和近2000家小型客户等主要原始设备制造商的创新和可靠性

LGL集团公司的工程和设计起源可以追溯到上个世纪初。 1917年，LGL的前身林奇玻璃机械公司成立，并在二十年代末成为玻璃成型机械的成功制造商。该公司后来更名为林奇公司，并于1928年根据印第安纳州法律注册成立。 1946年，林奇被列入“纽约路边交易所”，这是纽约证券交易所MKT的前身。该公司在精密工程，制造和服务领域拥有和经营各种业务的历史悠久。

LGL集团公司（以下简称“公司”）于2007年根据特拉华州法律重新注册，并作为控股公司，其子公司从事定制设计，高度工程化的电子元件制造。该公司的办公室位于佛罗里达州奥兰多市沙德路2525号，邮编32804。公司的普通股在纽约证券交易所股票代码：MKT上以股票代码“LGL”进行交易。

公司通过其主要子公司M-tron Industries，Inc.运营，包括M-tron Industries，Ltd.（“MTRON”）的运营，以及MTRON的子公司Piezo Technology，Inc.和Piezo Technology India Private Ltd.（合称“PTI”）。2004年10月，MTRON和PTI合并为一家公司，拥有业内最广泛的产品组合之一。MTRONPIT和PTI的联合业务被称为“MTRONPIT”。MTRONPIT在奥兰多、佛罗里达、扬克顿、南达科他州和印度诺伊达都有业务。此外，MtronPTI在香港和中国的上海设有销售办事处。

Mtron Industries，Inc.（“MTRON”）始建于1965年，原名为Mechtronics，Industries，Inc.。此后不久，该公司正式更名为M-tron Industries，Inc.。早期，MTRON的主要业务是为CB无线电市场制造晶振。当20世纪70年代末技术发生变化时，MTRON也发生了变化。营销方式的改变和产品的持续发展为公司提供了新的生活。MTRON被称为高质量、高可靠性晶体、振荡器的供应商，在某种程度上，VCXO（压电控制晶振）和TCXO（温度补偿晶振）产品将用于诸如电信基础设施（用于制造电话系统）以及后来的互联网功能等应用。1976年，M-tron Industries，Inc.被收购。2002年，MTRON收购了伊利诺伊州富兰克林公园的Champion Technologies，Inc.的资产。在20世纪80年代中期，Champion是摩托罗拉的子公司。这次收购通过扩大产品供应和客户群，帮助MTRON从2001年和2002年的电信市场崩溃中更快地复苏。

1965年，几乎在MTRON成立的同时，成立了另一家公司，名为Piezo Technology，Inc.。PTI的成立是为了设计和建造用于所有类型设备的晶体滤波器，其中某些类型的噪声需要从电路中过滤出来。多年来，PTI在业务和产品方面都有所发展，包括LC（集总元件）滤波器、TCXO和OCXO（恒温晶体振荡器）产品。PTI的主要市场是军事、航空电子和仪器仪表。1995年，PTI在印度开设了生产基地，2004年M-tron Industries，Inc.收购了Piezo Technology，Inc.。

LGL的业务发展战略主要集中在通过MTRONPTI晶振通过有机增长、扩展到新的地理市场细分市场以及通过其他战略机会扩展现有业务。MtronPTI目前在全球范围内占有一席之地，为大多数需要精确定时和过滤产品的主要市场提供服务。公司的目标细分市场包括高端电信、军事、仪器、空间和航空电子设备（简称“MISA”）。

日本村田新研发出一款MEMS谐振器，尺寸仅有0.9*0.6*0.3mm。实现了现石英晶体谐振器达不到超小尺寸，并且低ESR特性的产品。MEMS谐振器的诞生可代替许多石英晶体谐振器。有很多人就想问了什么是MEMS谐振器？它跟振荡器有什么区别？MEMS谐振器有哪些特点？工作原理有哪些？使用都需要注意一些什么问题？等等一大串的问题就随之而来了。

那么我们将一一把问题给大家回复。

首先，大家肯定是会对日本村田陶瓷晶振制作所研发出的产品有些疑问，什么是MEMS呢？其实MEMS指的是微机电系统（Micro Mlectro Mechanical Systems),这种装置运用了半导体生产工艺技术，具有三维微细结构。除了面对MEMS谐振器还有一种是振荡器，MEMS振荡器跟其它普通石英晶体振荡器是一样的，将振荡用电路也谐振器融为一体的装置。可用科尔皮兹振荡电路之类的普通振荡电路驱动。

WMRAG32K76CS1C00R0谐振器是村田MEMS技术的代表作品。该产品具有体极柢的ESR特性以及极小尺寸封装，这个是目前石英晶体谐振器无法实现的突破。极小的尺寸有助于减小安装面积，通过优化IC增益，实现了低ESR的MEMS谐振器，降低了功耗。也可用于回流焊接，引线键合和传递模型。WMRAG32K76CS1C00R0谐振器具有晶体该有的特性，32.768KHZ标频以及20PPM标准稳定偏差。可在-30~+85度下正常工作。驱动电平在0.2μW以内。当您考虑置换晶体的时候，要注意晶体谐振器和MEMS谐振器的负载电容量值不同。

并且要知道MEMS谐振器与普通石英晶体谐振器的区别。

1. Introduction 

When ordering crystals for oscillators that are to operate at a frequency f, e.g. 32.768 kHz or 20 MHz, it is usually not sufficient to specify the frequency of operation alone. While the crystals will oscillate at a frequency near their series resonant frequency, the actual frequency of oscillation is usually slightly different from this frequency (being slightly higher in “parallel resonant circuits”).1 

So, suppose you have a crystal oscillator circuit and you want to purchase crystals such that when placed in this circuit the oscillation frequency is f. What do you need to tell the crystal manufacturer to accomplish this? Do you need to send a schematic of the oscillator design with all the associated details of its design, e.g. choice of capacitors, resistors, active elements, and strays associated with the layout? Fortunately, the answer is no. In addition to the frequency f, all that is needed is a single number, the load capacitance CL . 

2. What is CL ? 

Suppose your crystal oscillator operates at the desired frequency f. At that frequency, the crystal has complex impedance Z, and for the purposes of frequency of operation, this is the only property of the crystal that matters. Therefore, to make your oscillator operate at the frequency f, you need crystals that have impedance Z at the frequency f. So, at worst, all you need to specify is a single complex number Z = R+jX. In fact, it is even simpler than this. 

While in principal one should specify the crystal resistance R at the frequency f, usually the crystal-to- crystal variation in R and the oscillator’s sensitivity to this variation are sufficiently low that a specification of R is not necessary. This is not to say that the crystal resistance has no effect; it does. We shall discuss this further in Section 4. 

So, that leaves a single value to specify: The crystal reactance X at f. So, one could specify a crystal having a reactance of 400 ? at 20 MHz. Instead,however, this is normally done by specifying a capacitance C L and equating.

where we have set ω = 2πf. Physically, at this frequency, the impedance of the series combination of the crystal and a capacitance C L has zero phase (equivalently, has zero reactance or is purely resistive). See Figure 1. To see this, consider

where the second step follows by Equation (1) and the fact that the reactance of a capacitance C is -1/( ωC).

Figure 1—This series combination has zero-phase impedance at a frequency where the crystal has load capacitance CL

So, the task of assuring proper oscillation frequency is the task of providing components (crystals in this case) that, at the specified frequency, have the required reactance, which is stated in terms of a capacitance CL by Equation (1).2 For example, instead of specifying crystals having a reactance of 400 ? at 20 MHz, we specify crystals having a load capacitance of 20 pF at 20 MHz, or more normally, we specify that the crystal frequency be 20 MHz at a load capacitance of 20 pF. 

In “parallel resonant circuits,” CL is positive, typically being between 5 pF and 40 pF. In this case the crystal operates in that narrow frequency band between the crystal’s series and parallel resonant frequencies (F s and F p , respectively).

While a truly “series resonant circuit” does not have a load capacitance associated with it [or perhaps an infinite value by Equation (1)], most “series resonant circuits” actually operate slightly off of the series resonant frequency and therefore do have a finite load capacitance (that can be positive or negative).However, if this offset is small and specifying a load capacitance is not desired, it can either be ignored or handled by a slight offset in the specified frequency f.

As we shall see in Section 4, both the oscillator and the crystal determine C L . However, the crystal’s role is rather weak in that in the limit of zero resistance,the crystal plays no role at all in determining C L . In this limiting case, it makes sense to refer to C L as the oscillator load capacitance as it is determined entirely by the oscillator. However, when it comes time to order crystals, one specifies crystals having frequency f at a load capacitance C L , i.e. it is a condition on the crystal’s frequency. Because of this,it would be reasonable to refer to C L as the crystal load capacitance. For the sake of argument, we simply avoid the issue and use the term loadcapacitance.

注释：1> When ordering crystals for series resonant operation,instead of specifying a value for C L , be sure to state that the frequency f refers to the series-resonant frequency, F s .

2> This is not to say that all aspects of frequency determination are tied to this single number. For example,other aspects of the crystal and oscillator determine whether the correct mode of oscillation is selected and the system’s frequency stability (short and long term).

3. Defining F L at C L

We now take Equation (1) as our defining relation for what we mean by a crystal having a given frequency at a given load capacitance.

Definition: A crystal has frequency F L at a load capacitance C L when the reactance X of the crystal at frequency F L is given by Equation (1), where now ω = 2πF L .

Recall that, around a given mode, the reactance of a crystal increases from negative values, through zero at series resonance, to large positive values near parallel resonance where it rapidly decreases to large negative values, and then again it increases towards zero. (See Reference [1].) By excluding a region around parallel resonance, we have a single frequency for each value of reactance. In this way,we can associate a frequency F L given a value of C L .So, positive values of C L correspond to a frequency between series and parallel resonance. Large negative values of C L , correspond to a frequency below series resonance while smaller negative values correspond to frequencies above parallel resonance.(See Equation (3) below.)

3.1. The crystal frequency equation So, how much does the frequency of oscillation depend on the load capacitance C L ? We can answer this question by determining how the crystal frequency F L depends on the crystal load capacitance CL . One can show that to a very good approximation that

where C 1 and C 0 are the motional and static capacitances of the crystal, respectively. (See Reference [1] for a derivation and discussion of this relation.) For the purposes of this note, we shall refer to Equation (3) as the crystal frequency equation.

This shows the dependence of a crystal oscillator’s operational frequency on its load capacitance and its dependence on the crystal itself. In particular, the fractional frequency change when changing the load capacitance from C L1 to C L2 is given to good approximation by

3.2. Trim sensitivity

Equation (3) gives the dependence of operating frequency F L on the load capacitance C L . The negative fractional rate of change of the frequency with C L is known as the trim sensitivity, TS. Using Equation (3), this is approximately

From this we see that the crystal is more sensitive to given change in C L at lower values of C L .

4. But what determines C L ?

Consider the simple Pierce oscillator consisting of a crystal, an amplifier, and gate and drain capacitors as shown in Figure 2.

There are at least three stray capacitances that must be considered in trying to calculate the load capacitance of the Pierce oscillator circuit.

1.  An added capacitance from the input of the amplifier to ground. Sources for this could be the amplifier itself and trace capacitance to ground. As this capacitance is in parallel with C G , we can simply absorb this into our definition of C G . (That is C G is the capacitance of the capacitor to ground plus any additional capacitance to ground on this side of the amplifier.)

2.  An added capacitance from the output of the amplifier to ground. Sources for this could be the amplifier itself and trace capacitance to ground. As this capacitance is in parallel with C D , we can simply absorb this into our definition of C D . (That is C D is the capacitance of the capacitor to ground plus any additional capacitance to ground on this side of the amplifier.)

3.  A stray capacitance C s shunting the crystal as shown in Figure 2.

Redefining C G and C D as discussed above, it then follows [2] that one of the conditions for oscillation is 

Where

is the impedance of the parallel combination of the crystal and the capacitance C s and R o is the output resistance of the amplifier.

It can be shown that the crystal resistance R as a function of load capacitance C L is given approximately by (provided C L is not too small)

where R 1 is the motional resistance of the crystal [1].It then follows that (provided C L – C s is not too small)

And

With these results, Equation (6) gives the following equation for C L

where R ′ is approximated by Equation (9). Note that the equation for C L is actually a bit more complicated than it might seem at first as R ′ depends upon on C L.It can be seen that C L decreases as R 1 increases, and so by Equation (3), the frequency of operation increases with crystal resistance. So, the load capacitance does have a dependence on the crystal itself. But as we have mentioned previously, the variation in crystal resistance and resulting sensitivity to this variation is usually sufficiently low that the dependence can be ignored. (In this case, a nominal value for crystal resistance is used in calculating C L .)

However, sometimes the resistance effect cannot be ignored. Two crystals tuned so that both have exactly the same frequency at a given load capacitance C L can oscillate at different frequencies in the same oscillator if their resistances differ. This slight difference leads to an increase in the observed system frequency variation above that due to crystal frequency calibration errors and the board-to-board component variation.

Note that in the case of zero crystal resistance (or at least negligible compared to the output resistance Ro of the amplifier), Equation (11) gives

So, in this case, the load capacitance is the stray capacitance shunting the crystal plus the series capacitance of the two capacitances on each side of the crystal to ground.

5. Measuring CL

While in principal one could calculate C L from the circuit design, an easier method is simply to measure C L . This is also more reliable since it does not rely on the oscillator circuit model, takes into account the strays associated the layout (which can be difficult to estimate), and it takes into account the effect of crystal resistance. Here are two methods for measuring C L .

5.1 Method 1

This method requires an impedance analyzer, but does not require knowledge of the crystal parameters and is independent of the crystal model.

1.  Get a crystal that is similar to those that will be ordered, i.e. having similar frequency andresistance.

2.  Place this crystal in the oscillator and measurethe frequency of operation F L . In placing the crystal into the circuit, be careful not to damage it or do anything to cause undue frequency shifts.(If soldered in place, allow it to cool down to room temperature.) A good technique that avoids soldering is simply to press the crystal onto the board’s solder pads using, for example,the eraser end of a pencil and observe the oscillation frequency. Just be careful that the crystal makes full contact with the board. The system can still oscillate at a somewhat higher frequency without the crystal making full contact with the board.

3.  Using an impedance analyzer, measure the reactance X of the crystal at the frequency F L determined in Step 2.

4.  Calculate C L using Equation (1) and the measured values for F L ( ω = 2πF L ) and X at F L .

5.2 Method 2

This method is dependent upon the four-parameter crystal model and requires knowledge of these parameters (through your own measurement or as provided by the crystal manufacturer).

1.  Get a crystal that is similar to those that will be ordered, i.e. having similar frequency and resistance.

2.  Characterize this crystal. In particular measure its series frequency Fs , motional capacitance C1,and static capacitance C0.

3.  Place this crystal in the oscillator and measure the frequency of operation F L (as in Method 1,Step 2.)

4.  Calculate C L using Equation (3) and the measured values for F L , F s , C 1 , and C 0 .

It is recommended that either procedure be followed with at least 3 crystals. When done properly, this technique often gives values for C L that are consistent to about 0.1 pF. Further confidence in the final results can be found by repeating the procedure for a number of boards to estimate the board-to-board variation of C L .

Note that in the above, F L does not have to be precisely the desired oscillation frequency f. That is, the calculated value for C L is not a strong function of the oscillation frequency since normally only the crystal is strongly frequency dependent. If, for some reason, the oscillator does have strong frequency dependent elements, then using this procedure would be quite difficult.

6. Do I really need to specify a value for CL ?

There are at least three cases where a specification of C L is not necessary:

1.  You intend to operate the crystals at their series-resonant frequency.

2.  You can tolerate large errors in frequency (on theorder of 0.1% or more).

3.  The load capacitance of your circuit is sufficiently near the standard value (see crystal data sheet) that the frequency difference is tolerable. This difference can be calculated with Equation (4).

If your application does not meet one of the three conditions above, you should strongly consider estimating the load capacitance of your oscillator and use this value in specifying your crystals.

FOX CRYSTAL晶振公司成立于1979年，美国福克斯晶振电子有限公司总部位于美国的佛罗里达州的迈尔斯堡。福克斯电子公司的成立使得该公司成为美国领先的高精度，高可靠性的频率元器件制造供应商。按当时的情况来看，FOX晶振公司还是处于一个小型的家族式石英晶体和振荡器的供应商。

美国FOX晶振公司在过去的32年中持续增长，其中一个重要因素离不开其研发部门。福克斯晶振的工程师开发出了几百种产品，而且这些产品为晶体和振荡器的性能，精度以及可靠性带来了认可的新标准。并可以不断的增长业务的需求，缩短了交付晶体的周期。

FOX CRYSTAL Crystal Company was founded in 1979, and Fox Crystal Electronics Co., Ltd. is headquartered in Fort Myers, Florida, USA. The establishment of Fox Electronics has made the company a leading supplier of high-precision, high-reliability frequency components in the United States. According to the situation at the time, FOX Crystal is still a supplier of small family quartz crystals and oscillators.

The US FOX Crystal Company has continued to grow over the past 32 years, and one of the important factors is inseparable from its R&D department. Engineers at Fox Crystal have developed hundreds of products that bring new standards of acceptance for the performance, accuracy and reliability of crystals and oscillators. And can continue to grow business needs, shortening the cycle of delivering crystals.

台湾NSK晶振公司不仅生产石英晶振,石英晶体谐振器,晶体振荡器,温补晶振,压控晶体,还生产陶瓷谐振器(Ceramic Resonator),陶瓷滤波器(Ceramic Filter),ZTA陶瓷晶振,ZTT陶瓷晶振,3.58M,6M,4M,8M,16M,24M,27M频率均有现货供应.ZTA晶振可从低频1M到50MHZ,主要应用于电视遥控器,风扇遥控器,USB,鼠标等产品.

NSK Ceramic Resonator

	NRA ZTA/ MG, MT, MX	DIP	1.8 MHz to 50.0 MHz	10.0*5.0*10.0

	NRE ZTTCV MT, MX	SMD	8.0 to 50 MHz	3.7*3.1*1.2

	NRE ZTTCS MT, MX	SMD	7.0 to 50 MHz	4.7*4.1*1.6

	NRE ZTTCC MG	SMD	2 to 6.99 MHz	7.4*3.4*1.8

	NRD ZTACV MT, MX	SMD	8.0 to 50 MHz	3.7*3.1*1.2

	NRD ZTACS MT, MX	SMD	7.0 to 50 MHz	4.7*4.1*1.6

	NRD ZTACC MG	SMD	2.0 to 6.99 MHz	7.4*3.4*1.8

	NRT ZTT/ MG, MT, MX	DIP	1.8 MHz to 50 MHz	10.0*5.0*10.0

NSK Ceramic Filter

陶瓷滤波器LT4.5MB,LT5.5MB,LT6.5MB可以免提提供样品测试,陶瓷滤波器主要应用于TV/VCR产品等.L10.7M陶瓷滤波器均可在线供应.

	NRF LT4.5MB	DIP	4.43MHz to 6.5MHz	5*3.2

	NRF LTCA/CV	SMD	10.7MHz	6.9*2.9*1.5

	NRF JT4.5MD	DIP	4.5MHz to 6.5MHz	9.0*5.0*10.0

	NRF JT4.5MC	DIP	4.5MHz to 6.5MHz	9.0*5.0*10.0

NRF JT10.7M

SMD

10.7MHz

9.0*5.0*7.0

Taiwan NSK Crystal Co., Ltd. not only produces quartz crystal oscillator, quartz crystal resonator, crystal oscillator, temperature-compensated crystal oscillator, voltage-controlled crystal, but also ceramic resonator (Ceramic Resonator), ceramic filter (Ceramic Filter), ZTA ceramic crystal, ZTT ceramic. Crystal oscillator, 3.58M, 6M, 4M, 8M, 16M, 24M, 27M frequency are available from stock. ZTA crystal oscillator can be used from low frequency 1M to 50MHZ, mainly used in TV remote control, fan remote control, USB, mouse and other products.

TXC晶振有分好多種類型,溫補晶體振蕩器,壓控振蕩器,恒溫晶體振蕩器OCXO振蕩器.以下泰河電子為大家整理提供已分好類別的TXC溫補振蕩器及VCXO振蕩器選型表,以供大家選型參考使用.雖然TXC晶振的型號眾多,但是並不會難記.

TXC压控振荡器VCXO系列 - CMOS
	Model	Frequency	Stability (-40~85ºC)	Voltage	Output	Oscillation	Dimensions
	6U	1 ~ 59MHz	±50ppm	3.3V, 5V	CMOS	Fundamental	7 x 5 x 1.3mm
	BR	60 ~ 200MHz	±50ppm	3.3V	CMOS	Fundamental	7 x 5 x 1.3mm
	CR	50 ~ 200MHz	±50ppm	3.3V	CMOS	Fundamental	5 x 3.2 x 1.2mm

1.5px;"="">TXC压控振荡器VCXO系列 - 差分晶振 一般来说单相输出称之为晶体振荡器,并以正弦波或者CMOS波型(矩型波)输出为主要代表. 剪切的正弦波输出具有类似圆角矩形的波形,并常用于RF电路,因为它抑制了不必要的谐波.TCXO(温度补偿晶体振荡器)被称为削波正弦波输出的产物.由于CMOS波输出是对应于数字信号处理的逻辑电子的信号输出,所以有利于数字信号的传送,并用于时钟,如CPU等.
	Model	Frequency	Stability (-40~85ºC)	Voltage	Output	Oscillation	Dimensions
	BJ	60 ~ 200MHz	±50ppm	3.3V	LVPECL	Fundamental	7 x 5 x 1.3mm
	BK	60 ~ 700MHz	±50ppm	3.3V	LVPECL	PLL	7 x 5 x 1.3mm
	BN	60 ~ 200MHz	±50ppm	3.3V	LVDS	Fundamental	7 x 5 x 1.3mm
	BP	60 ~ 700MHz	±50ppm	3.3V	LVDS	PLL	7 x 5 x 1.3mm
	CJ	60 ~ 200MHz	±50ppm	3.3V	LVPECL	Fundamental	5 x 3.2 x 1.2mm
	CN	50 ~ 200MHz	±50ppm	3.3V	LVDS	Fundamental	5 x 3.2 x 1.2mm

1.5px;"="">TXC温补振荡器TCXO系列 - Basic 什么是温补晶振。来自温度传感器的输出信号用于通过补偿网络产生校正电压。 校正电压施加到VCXO中的变容二极管。 电容变化可以补偿晶体的频率与温度特性.
	Model	Frequency	Stability (-30~85ºC)	Operating Temp	Voltage	Output	Dimensions
	7Q	13 ~ 52MHz	±2ppm	-40~+85ºC	2.4V-3.3V	Clipped Sinewave	3.2 x 2.5 x 1mm
	7L	13 ~ 52MHz	±2ppm	-40~+85ºC	1.8V-3.3V	Clipped Sinewave	2.5 x 2 x 0.8mm
	7Z	26 ~ 52MHz	±2ppm	-40~+85ºC	1.8V-3.3V	Clipped Sinewave	2.0 x 1.6 x 0.8mm
	8P	26 ~ 52MHz	±2ppm	-40~+85ºC	1.8V-3.3V	Clipped Sinewave	1.6 x 1.2 x 0.6mm

TXC温补振荡器TCXO系列 - GPS专用
	Model	Frequency	Stability (-30~85ºC)	Operating Temp	Voltage	Output	Dimensions
	7Q	13 ~ 52MHz	±0.5ppm	-40~+85ºC	2.4V-3.3V	Clipped Sinewave	3.2 x 2.5 x 1mm
	7L	13 ~ 52MHz	±0.5ppm	-40~+85ºC	1.8V-3.3V	Clipped Sinewave	2.5 x 2 x 0.8mm
	7Z	26 ~ 52MHz	±0.5ppm	-40~+85ºC	1.8V-3.3V	Clipped Sinewave	2.0 x 1.6 x 0.8mm
	8P	26 ~ 52MHz	±0.5ppm	-40~+85ºC	1.8V-3.3V	Clipped Sinewave	1.6 x 1.2 x 0.6mm

TXC温补振荡器TCXO系列 - 高精度振荡器
	Model	Frequency	Stability (-40~85ºC)	Voltage	Output	Dimensions
	7N	10 ~ 52MHz	±0.28ppm	2.7V-5.5V	Clipped Sinewave /CMOS	7 x 5 x 2mm
	7P	10 ~ 52MHz	±0.28ppm	2.7V-5.5V	Clipped Sinewave /CMOS	5 x 3.2 x 1.2mm

TXC恒温晶体振荡器OCXO系列 - CMOS
	Model	Frequency	Stability	Voltage	Output	Dimensions
	OC	10 ~ 25MHz	±5ppb (0~70ºC)	5, 12V	CMOS	36 x 27mm
	OB	10 ~ 25MHz	±10ppb (0~75ºC)	3.3, 5V	CMOS	25 x 25mm
	OA	10 ~ 40MHz	±200ppb (-30~70ºC)	3.3, 5V	CMOS	20 x 20mm

得益于32.768K有源晶振的参与,所有这些级别都已标准化,其基本性能参数在ANSIT1.101中定义.通常,已经建立了各级的性能参数,以确保可以通过网络从最精确的时钟,通过中间时钟到最不精确的时钟传输同步.Stratum2,3E和3个时钟构成了服务提供商同步网络的主要分布部分,这些HCMOS有源时钟晶振通常成对地部署在NE中.

当前最先进的通信电路,例如：

•μWave频率上变频器

•点对点μWave回程

•卫星调制解调器

•高端网络

•测试和测量设备

都有一个共同点;极低的相位噪声频率参考.从历史上看,为了达到这种水平的相位噪声,振荡器制造商依靠SC-Cut晶振或第5或第7泛音AT-Cut晶体作为参考振荡器解决方案.

前者产生的OCXO体积庞大,功耗过大而且相当昂贵.后者实施起来很复杂,频率提供有限,并且抑制了系统自动校正老化和温度漂移的能力.

解决成本,尺寸,功率,频率稳定性和长期老化校正的综合挑战;Abracon开发了ABLNO系列VCXO晶振,具有出色的相位噪声特性,采用9x14mm封装.

提供50.0MHz和156.25MHz之间的十五个标准频率;这些器件为设计人员提供了全面的参考时序选择.此外,如果系统要求不能使用电压可控振荡器,ABLNO系列可提供固定时钟配置.

图(1)示出了50MHz载波处的典型相位噪声,而图(2)和(3)分别表示100MHz和156.25MHz载波处的典型相位噪声.表(1)总结了在这些载波上配置为VCXO振荡器的ABLNO系列的典型相位噪声性能,而表(2)表示绝对最差情况下的相位噪声特性.

表格1)

典型的相位噪声性能

表(2)

最差情况保证相位噪声性能

ABLNO系列采用经过特殊处理的第3版Overtone,AT-Strip石英晶体设计,采用各种处理技术进行优化,可在温度范围内提供极高的无负载“Q”和频率稳定性.这些晶体和振荡器电路的组合设计具有同类最佳的相位噪声作为主要目标;在载波的12kHz至20MHz的最佳带宽范围内产生了极低的均方根抖动.

表3)

ABLNO系列rms抖动

为了确保出色的相位噪声性能,ABLNO系列不仅满足上述设计的性能参数,而且Abracon还对100％的产品进行了相位噪声和均方根抖动兼容性的室温测试.

如前所述,Abracon已经制定了专有的Quartz-Blank处理技术,以显着降低这些器件的频率与温度误差.通常,相对于25ºC下的测量频率,ABLNO系列器件的误差小于±12ppm(最大值为±18ppm).在-40ºC至+85ºC的工作温度范围内可确保稳定性,如下图(4)所示.

此外,这些器件在10年的产品寿命期间保证比±7ppm的老化更好.为了在此期间实现频率校正能力,VCXO配置中保证了±28ppm的最小频率牵引能力,见图(5).

当需要标准XO(晶体振荡器)或VCXO(压控晶体振荡器)无法达到的温度稳定性时,TCXO是必需的.

温度稳定性是振荡器频率随温度变化的量度,并且以两种方式定义.一种常见的方法是使用“加/减”规格(例如：±0.28ppm对比工作温度范围,参考25°C-温度范围通常为-40至85°C或-20至70°C).该规范告诉我们,如果我们将25°C的频率设为标称频率,则器件频率将偏离或低于该标称频率不超过0.28ppm.这与指定温度稳定性的第二种方式不同,即使用峰峰值或仅使用没有参考点的正/负值.在第二种情况下,我们不能说我们知道频率会高于或低于频率将会发生多大变化-只是我们知道总的范围是多少.通常,使用来自定义的参考点的正负值来指定设备.

TCXO晶振对工程师非常有用,因为它们可以在比电路板上具有相同功耗和占用空间的标准VCXO更好的温度稳定性的10倍到40倍之间使用.TCXO弥合了标准XO或VCXO与OCXO之间的差距,这些差距更高,需要更多功率才能运行.推动技术的目标是降低功耗,当然还要降低成本,因此TCXO为功耗和成本敏感的应用提供了良好的中端解决方案.

Figure1.TheTemperatureStabilityrangesofvariousoscillatortypes

图1是不同振荡器类型的典型温度稳定性的示意图,范围从标准VCXO的50ppm到高性能OCXO的0.2ppb.轴反转使得曲线在增加温度稳定性的方向上增长.TCXO稳定性范围涵盖VCXO和OCXO之间的中间位置(在某些情况下,重叠某些OCXO性能).

TCXO晶振温度稳定性水平(从5ppm到50ppb)通常是必要的,因为振荡器将独立工作,无论是在没有外部频率参考的系统中的自由运行模式,还是作为固定频率参考TCXO在开环中工作的合成器,用于驱动DDS(直接数字合成),而DDS而不是TCXO被“锁定”到外部参考.

后一种情况(TCXO是开环,频率在DDS设置)正变得越来越普遍,因为设计人员发现使用DDS解决方案可以通过使用数模转换器控制TCXO来实现更好的频率分辨率.由于转向是在DDS而不是振荡器中完成的,因此设计人员需要能够对固定基准的频率如何随温度变化做出某些假设,以便他们可以相应地规划锁相环的设计.由于灵活性,它们允许TCXO用于许多频率控制应用,但一个重要领域是小型蜂窝基站(毫微微,微型和微微),通常它们被用作定时分配芯片的固定频率源. 

TCXO温度补偿晶振如何运作

在非常基本的术语中,TCXO通过采用温度补偿网络来操作,该网络感测环境温度并将晶体拉至其标称值.基本振荡器电路和输出级与VCXO中的预期相同.

图2是简化的TCXO功能框图.

图2.TCXO功能块

这个想法是补偿网络驱动牵引网络,然后调整振荡器的频率.

图3是发生了什么的概述-未补偿的晶振频率响应温度(红色)就像一个三阶多项式曲线(如果你采用振荡器非线性效果,更像是第五个),所以目标是补偿网络是为了抵消温度对晶体的影响而产生的电压是有效的关于晶体曲线温度轴的镜像.补偿电压显示为蓝色,得到的频率/温度曲线以绿色显示.

图3.温度补偿

实现这一目标的方法随着时间而改变.使用的第一种方法之一是直接补偿技术,其中使用热敏电阻,电容器和电阻器网络来直接控制振荡器的频率.温度的变化导致热敏电阻(图4中的RT1和RT2)发生变化,这会导致网络的等效串联电容发生变化-这反过来会改变晶体上的电容负载,从而导致频率的变化.振荡器.

图4.直接补偿

在随后的开发中(图5中所示的间接补偿),热敏电阻(RT1至RT3)和电阻(R1至R3)的网络用于产生与温度相关的电压.对网络的输出电压进行滤波,然后用于驱动变容二极管,该变容二极管改变晶振上的负载,再次导致频率变化.

图5间接补偿

目前的方法将补偿网络和拉网络集成到一个集成电路中(如图6所示),补偿网络的作用由一组运算放大器组成,这些运算放大器在一起产生温度上的3阶或5阶函数.与间接补偿方法一样,该电压用于驱动变容二极管,这反过来又改变了振荡器的输出频率.由于晶体特性的变化意味着没有“一刀切”的功能,因此在TCXO的温度测试期间得出了解决方案.两个电容器阵列用于将室温下的频率调节到标称值,然后在测试期间获得温度补偿功能所需的设置并存储在片上存储器中.

图6综合补偿

最后一种方法通常被称为“数字控制模拟补偿”,并且在小型TCXO设计中常见,因为可以在单个ASIC中提供大量功能.

爱普生新款产品FC-135R晶振的研发问世让更多消费者们更加的青睐于爱普生晶振系列产品.FC-135R晶振研发,可以从以下参数可以知道FC-135R晶振的频率偏差相对来说是比FC-135晶振较稳定的.频率偏差都是在10PPM与20PPM范围内,而FC-135晶振频率偏差则在10ppm,20ppm,甚至30ppm范围中,并且ESR的阻值比FC-135R晶振的阻值大.

FC-135R晶振参数表

以下是FC-135R晶振详细参数的编码,一个编码内部有指定相对应的频率,尺寸,负载电容,频率偏差,工作温度,ESR阻值等其它参数.

FC-135R晶振详细参数对应编码表

FC-135晶振参数表

FC-135晶振详细参数对应编码表

爱普生FC-135R晶振与FC-135晶振的尺寸大小还是一样的,只是内部的参数有所调整,不仅是从ESR阻值上或者是从频率偏差上有所改善.现在的客户都追求完美,对石英晶振产品的质量也是一样的,只要可以稍稍提高一丁点的准确度,而且保证自身产品正常运行的情况下客户还是原意去使用新产品的.

CMX309FBC9.8304MTR晶振9.8304MHz晶振CMX309FBC27.000M-UT晶振27MHz晶振CMX309FLC28.322M-UT晶振28.322MHz石英晶振 CMX309FLC12.288MT晶振12.288MHz晶振CMX309FBC10.000MTR晶振10MHz晶振CMX309FBC27.000M-UT晶振27MHz晶振CMX309FLC28.63636M-UT晶振28.63636MHz石英晶振CMX309FLC12.352MT晶振12.352MHz晶振CMX309FBC10.000MTR晶振10MHz晶振CMX309HBC32.000M-UT晶振32MHz晶振CMX309FLC28.63636M-UT晶振28.63636MHz石英晶振 CMX309FLC12.352MT晶振

CMX309晶振产品实物图

12.352MHz晶振CMX309FBC11.0592MTR晶振11.0592MHz晶振CMX309HBC32.000M-UT晶振32MHz晶振CMX309FLC29.498928M-UT晶振29.498928MHz石英晶振 CMX309FLC13.500MT晶振13.5MHz晶振CMX309FBC11.0592MTR晶振11.0592MHz晶振CMX309HBC32.768M-UT晶振32.768MHz晶振CMX309FLC29.498928M-UT晶振29.498928MHz石英晶振 CMX309FLC13.500MT晶振13.5MHz晶振CMX309FBC11.2896MTR晶振11.2896MHz晶振CMX309HBC32.768M-UT晶振32.768MHz晶振CMX309FLC30.000M-UT晶振30MHz石英晶振 CMX309FLC14.31818MT晶振14.31818MHz晶振CMX309FBC11.2896MTR晶振11.2896MHz晶振CMX309HBC33.000M-UT晶振33MHz晶振CMX309FLC30.000M-UT晶振30MHz石英晶振 CMX309FLC14.31818MT晶振14.31818MHz晶振CMX309FBC12.000MTR晶振12MHz晶振CMX309HBC33.000M-UT晶振33MHz晶振CMX309HWC32.000M-UT晶振32MHz石英晶振 CMX309FLC14.7456MT晶振14.7456MHz晶振CMX309FBC12.000MTR晶振12MHz晶振CMX309HBC33.3333M-UT晶振33.3333MHz晶振CMX309HWC32.000M-UT晶振32MHz石英晶振

CMX309晶振产品尺寸图

 CMX309FLC14.7456MT晶振14.7456MHz晶振CMX309FBC12.288MTR晶振12.288MHz晶振CMX309HBC33.3333M-UT晶振33.3333MHz晶振CMX309HWC32.768M-UT晶振32.768MHz石英晶振 CMX309FLC15.360MT晶振15.36MHz晶振CMX309FBC12.288MTR晶振12.288MHz晶振CMX309HBC36.864M-UT晶振36.864MHz晶振CMX309HWC32.768M-UT晶振32.768MHz石英晶振 CMX309FLC15.360MT晶振15.36MHz晶振CMX309FBC14.31818MTR晶振14.31818MHz晶振CMX309HBC36.864M-UT晶振36.864MHz晶振CMX309HWC33.000M-UT晶振33MHz石英晶振 CMX309FLC16.000MT晶振16MHz晶振CMX309FBC14.31818MTR晶振14.31818MHz晶振CMX309HBC40.000M-UT晶振40MHz晶振CMX309HWC33.000M-UT晶振33MHz石英晶振 CMX309FLC16.000MT晶振16MHz晶振CMX309FBC14.7456MTR晶振14.7456MHz晶振CMX309HBC40.000M-UT晶振40MHz晶振CMX309HWC33.8688M-UT晶振33.8688MHz石英晶振 CMX309FLC16.384MT晶振16.384MHz晶振CMX309FBC14.7456MTR晶振14.7456MHz晶振CMX309HBC48.000M-UT晶振48MHz晶振CMX309HWC33.8688M-UT晶振33.8688MHz石英晶振 CMX309FLC16.384MT晶振16.384MHz晶振CMX309FBC16.000MTR晶振16MHz晶振CMX309HBC48.000M-UT晶振48MHz晶振CMX309HWC40.000M-UT晶振40MHz石英晶振 CMX309FLC16.6666MT晶振16.6666MHz晶振CMX309FBC16.000MTR晶振16MHz晶振CMX309HBC50.000M-UT晶振50MHz晶振CMX309HWC40.000M-UT晶振40MHz石英晶振 CMX309FLC16.6666MT晶振16.6666MHz晶振CMX309FBC16.384MTR晶振16.384MHz晶振CMX309HBC50.000M-UT晶振50MHz晶振CMX309HWC48.000M-UT晶振48MHz石英晶振 CMX309FLC17.734475MT晶振17.734475MHz晶振CMX309FBC16.384MTR晶振16.384MHz晶振CMX309HBC53.125M-UT晶振53.125MHz晶振CMX309HWC48.000M-UT晶振48MHz石英晶振 CMX309FLC17.734475MT晶振17.734475MHz晶振CMX309FBC18.432MTR晶振18.432MHz晶振CMX309HBC53.125M-UT晶振53.125MHz晶振CMX309HWC49.152M-UT晶振49.152MHz石英晶振 CMX309FLC18.000MT晶振18MHz晶振CMX309FBC18.432MTR晶振18.432MHz晶振CMX309FLC1.544M-UT晶振1.544MHz晶振CMX309HWC49.152M-UT晶振49.152MHz石英晶振 CMX309FLC18.000MT晶振18MHz晶振CMX309FBC20.000MTR晶振20MHz晶振CMX309FLC1.544M-UT晶振1.544MHz晶振CMX309HWC50.000M-UT晶振50MHz石英晶振 CMX309FLC18.432MT晶振18.432MHz晶振CMX309FBC20.000MTR晶振20MHz晶振CMX309FLC1.8432M-UT晶振1.8432MHz晶振CMX309HWC50.000M-UT晶振50MHz石英晶振 CMX309FLC18.432MT晶振18.432MHz晶振CMX309FBC24.000MTR晶振24MHz晶振CMX309FLC1.8432M-UT晶振1.8432MHz晶振CMX309HWC53.125M-UT晶振53.125MHz石英晶振 CMX309FLC19.6608MT晶振19.6608MHz晶振CMX309FBC24.000MTR晶振24MHz晶振CMX309FLC2.000M-UT晶振2MHz晶振CMX309HWC53.125M-UT晶振53.125MHz石英晶振 CMX309FLC19.6608MT晶振19.6608MHz晶振CMX309FBC24.576MTR晶振24.576MHz晶振CMX309FLC2.000M-UT晶振2MHz晶振CMX309FLC27.000MB晶振27MHz石英晶振 CMX309FLC19.6608MT晶振19.6608MHz晶振CMX309FBC24.576MTR晶振24.576MHz晶振CMX309FLC2.048M-UT晶振2.048MHz晶振CMX309FLC6.000MB晶振6MHz石英晶振 CMX309FLC20.000MT晶振20MHz晶振CMX309FBC25.000MTR晶振25MHz晶振CMX309FLC2.048M-UT晶振2.048MHz晶振CMX309FBB19.6608MTR晶振19.6608MHz石英晶振 CMX309FLC20.000MT晶振20MHz晶振CMX309FBC25.000MTR晶振25MHz晶振CMX309FLC2.4576M-UT晶振2.4576MHz晶振CMX309FBB19.6608MTR晶振19.6608MHz石英晶振 CMX309FLC22.1184MT晶振22.1184MHz晶振CMX309FBC27.000MTR晶振27MHz晶振CMX309FLC2.4576M-UT晶振2.4576MHz晶振CMX309FBC30.000MTR晶振30MHz石英晶振 CMX309FLC22.1184MT晶振22.1184MHz晶振

CMX309晶振产品参数表

CMX309FBC27.000MTR晶振27MHz晶振CMX309FLC3.072M-UT晶振3.072MHz晶振CMX309FBC30.000MTR晶振30MHz石英晶振 CMX309FLC24.000MT晶振24MHz晶振CMX309HBC32.000MTR晶振32MHz晶振CMX309FLC3.072M-UT晶振3.072MHz晶振CMX309FLC10.240MTR晶振10.24MHz石英晶振 CMX309FLC24.000MT晶振24MHz晶振CMX309HBC32.000MTR晶振32MHz晶振CMX309FLC3.579545M-UT晶振3.579545MHz晶振CMX309FLC10.240MTR晶振10.24MHz石英晶振 CMX309FLC24.576MT晶振24.576MHz晶振CMX309HBC32.768MTR晶振32.768MHz晶振CMX309FLC3.579545M-UT晶振3.579545MHz晶振CMX309FLC16.257MTR晶振16.257MHz石英晶振 CMX309FLC24.576MT晶振24.576MHz晶振CMX309HBC32.768MTR晶振32.768MHz晶振CMX309FLC3.6864M-UT晶振3.6864MHz晶振CMX309FLC16.257MTR晶振16.257MHz石英晶振 CMX309FLC25.000MT晶振25MHz晶振CMX309HBC33.000MTR晶振33MHz晶振CMX309FLC3.6864M-UT晶振3.6864MHz晶振CMX309HBC3.6864MTR晶振3.6864MHz石英晶振 CMX309FLC25.000MT晶振25MHz晶振CMX309HBC33.000MTR晶振33MHz晶振CMX309FLC4.000M-UT晶振4MHz晶振CMX309HBC3.6864MTR晶振3.6864MHz石英晶振 CMX309FLC25.175MT晶振25.175MHz晶振CMX309HBC33.3333MTR晶振33.3333MHz晶振CMX309FLC4.000M-UT晶振4MHz晶振CMX309FBC22.1184M-UT晶振22.1184MHz石英晶振 CMX309FLC25.175MT晶振25.175MHz晶振CMX309HBC33.3333MTR晶振33.3333MHz晶振CMX309FLC4.096M-UT晶振4.096MHz晶振CMX309FBC28.322MTR晶振28.322MHz石英晶振 CMX309FLC27.000MT晶振27MHz晶振CMX309HBC36.864MTR晶振36.864MHz晶振CMX309FLC4.096M-UT晶振4.096MHz晶振CMX309FBC4.9152MTR晶振4.9152MHz石英晶振 CMX309FLC27.000MT晶振27MHz晶振CMX309HBC36.864MTR晶振36.864MHz晶振CMX309FLC4.9152M-UT晶振4.9152MHz晶振CMX309HBC33.333300MTR晶振33.3333MHz石英晶振 CMX309FLC28.322MT晶振28.322MHz晶振CMX309HBC40.000MTR晶振40MHz晶振CMX309FLC4.9152M-UT晶振4.9152MHz晶振CMX309HWC36.864MTR晶振36.864MHz石英晶振 CMX309FLC28.322MT晶振28.322MHz晶振CMX309HBC40.000MTR晶振40MHz晶振CMX309FLC5.000M-UT晶振5MHz晶振CMX309FLC7.3728M-UT晶振7.3728MHz石英晶振 CMX309FLC28.63636MT晶振28.63636MHz晶振CMX309HBC48.000MTR晶振48MHz晶振CMX309FLC5.000M-UT晶振5MHz晶振CMX309FLC8.000M-UT晶振8MHz石英晶振 CMX309FLC28.63636MT晶振28.63636MHz晶振CMX309HBC48.000MTR晶振48MHz晶振CMX309FLC6.000M-UT晶振6MHz晶振CMX309FLC8.000M-UT晶振8MHz石英晶振 CMX309FLC29.498928MT晶振29.498928MHz晶振CMX309HBC50.000MTR晶振50MHz晶振CMX309FLC6.000M-UT晶振6MHz晶振CMX309FLC8.192M-UT晶振8.192MHz石英晶振 CMX309FLC29.498928MT晶振29.498928MHz晶振CMX309HBC50.000MTR晶振50MHz晶振CMX309FLC6.144M-UT晶振6.144MHz晶振CMX309FLC8.192M-UT晶振8.192MHz石英晶振 CMX309FLC30.000MT晶振30MHz晶振CMX309HBC53.125MTR晶振53.125MHz晶振CMX309FLC6.144M-UT晶振6.144MHz晶振CMX309FLC9.8304M-UT晶振9.8304MHz石英晶振 CMX309FLC30.000MT晶振30MHz晶振CMX309HBC53.125MTR晶振53.125MHz晶振CMX309FLC7.3728M-UT晶振7.3728MHz晶振CMX309FBC1.8432M-UT晶振1.8432MHz石英晶振 CMX309HWC32.000MT晶振32MHz晶振CMX309FBC1.000M-UT晶振1MHz晶振CMX309FBC1.544M-UT晶振1.544MHz晶振CMX309FBC1.8432M-UT晶振1.8432MHz石英晶振 CMX309HWC32.000MT晶振32MHz晶振CMX309FBC1.000M-UT晶振1MHz晶振CMX309HWC32.768MT晶振32.768MHz晶振CMX309FBC1.544M-UT晶振1.544MHz石英晶振 晶振晶振晶振晶振晶振晶振CMX309HWC32.768MT晶振32.768MHz石英晶振

CMX309FLC1.544MT晶振1.544MHz晶振CMX309HWC33.000MT晶振33MHz晶振CMX309FBC2.000M-UT晶振2MHz晶振CMX309FLC9.8304M-UT晶振9.8304MHz石英晶振 CMX309FLC1.544MT晶振1.544MHz晶振CMX309HWC33.000MT晶振33MHz晶振CMX309FBC2.000M-UT晶振2MHz晶振CMX309FLC10.000M-UT晶振10MHz石英晶振 CMX309FLC1.8432MT晶振1.8432MHz晶振CMX309HWC33.3333MT晶振33.3333MHz晶振CMX309FBC2.048M-UT晶振2.048MHz晶振CMX309FLC10.000M-UT晶振10MHz石英晶振 CMX309FLC1.8432MT晶振1.8432MHz晶振CMX309HWC33.3333MT晶振33.3333MHz晶振CMX309FBC2.048M-UT晶振2.048MHz晶振CMX309FLC11.0592M-UT晶振11.0592MHz石英晶振 CMX309FLC2.000MT晶振2MHz晶振CMX309HWC33.8688MT晶振33.8688MHz晶振CMX309FBC2.4576M-UT晶振2.4576MHz晶振CMX309FLC11.0592M-UT晶振11.0592MHz石英晶振 CMX309FLC2.000MT晶振2MHz晶振CMX309HWC33.8688MT晶振33.8688MHz晶振CMX309FBC2.4576M-UT晶振2.4576MHz晶振CMX309FLC11.2896M-UT晶振11.2896MHz石英晶振 CMX309FLC2.048MT晶振2.048MHz晶振

CMX309晶振产品实物图

CMX309HWB40.000MT晶振40MHz晶振CMX309FBC3.6864M-UT晶振3.6864MHz晶振CMX309FLC11.2896M-UT晶振11.2896MHz石英晶振 CMX309FLC2.048MT晶振2.048MHz晶振CMX309HWB40.000MT晶振40MHz晶振CMX309FBC3.6864M-UT晶振3.6864MHz晶振CMX309FLC12.000M-UT晶振12MHz石英晶振 CMX309FLC2.4576MT晶振2.4576MHz晶振CMX309HWC44.2368MT晶振44.2368MHz晶振CMX309FBC4.000M-UT晶振4MHz晶振CMX309FLC12.000M-UT晶振12MHz石英晶振 CMX309FLC2.4576MT晶振2.4576MHz晶振CMX309HWC44.2368MT晶振44.2368MHz晶振CMX309FBC4.000M-UT晶振4MHz晶振CMX309FLC12.288M-UT晶振12.288MHz石英晶振 CMX309FLC3.072MT晶振3.072MHz晶振CMX309HWC48.000MT晶振48MHz晶振CMX309FBC5.000M-UT晶振5MHz晶振CMX309FLC12.288M-UT晶振12.288MHz石英晶振 CMX309FLC3.072MT晶振3.072MHz晶振CMX309HWC48.000MT晶振48MHz晶振CMX309FBC5.000M-UT晶振5MHz晶振CMX309FLC13.500M-UT晶振13.5MHz石英晶振 CMX309FLC3.579545MT晶振3.579545MHz晶振CMX309HWC49.152MT晶振49.152MHz晶振

CMX309晶振产品尺寸图

CMX309FBC8.000M-UT晶振8MHz晶振CMX309FLC13.500M-UT晶振13.5MHz石英晶振 CMX309FLC3.579545MT晶振3.579545MHz晶振CMX309HWC49.152MT晶振49.152MHz晶振CMX309FBC8.000M-UT晶振8MHz晶振CMX309FLC14.31818M-UT晶振14.31818MHz石英晶振 CMX309FLC3.6864MT晶振3.6864MHz晶振CMX309HWC50.000MT晶振50MHz晶振CMX309FBC8.192M-UT晶振8.192MHz晶振CMX309FLC14.31818M-UT晶振14.31818MHz石英晶振 CMX309FLC3.6864MT晶振3.6864MHz晶振CMX309HWC50.000MT晶振50MHz晶振CMX309FBC8.192M-UT晶振8.192MHz晶振CMX309FLC14.7456M-UT晶振14.7456MHz石英晶振 CMX309FLC4.000MT晶振4MHz晶振CMX309HWC53.125MT晶振53.125MHz晶振CMX309FBC9.8304M-UT晶振9.8304MHz晶振CMX309FLC14.7456M-UT晶振14.7456MHz石英晶振 CMX309FLC4.000MT晶振4MHz晶振CMX309HWC53.125MT晶振53.125MHz晶振CMX309FBC9.8304M-UT晶振9.8304MHz晶振CMX309FLC15.360M-UT晶振15.36MHz石英晶振 CMX309FLC4.096MT晶振4.096MHz晶振CMX309FBB16.384MT晶振16.384MHz晶振CMX309FBC10.000M-UT晶振10MHz晶振CMX309FLC15.360M-UT晶振15.36MHz石英晶振 CMX309FLC4.096MT晶振4.096MHz晶振CMX309FBC16.384MT晶振16.384MHz晶振CMX309FBC10.000M-UT晶振10MHz晶振CMX309FLC16.000M-UT晶振16MHz石英晶振 CMX309FLC4.9152MT晶振4.9152MHz晶振CMX309HWC56.000MT晶振56MHz晶振CMX309FBC11.0592M-UT晶振11.0592MHz晶振CMX309FLC16.000M-UT晶振16MHz石英晶振 CMX309FLC4.9152MT晶振4.9152MHz晶振CMX-309FAB 24.576MB晶振24.576MHz晶振CMX309FBC11.0592M-UT晶振11.0592MHz晶振CMX309FLC16.384M-UT晶振16.384MHz石英晶振 CMX309FLC5.000MT晶振5MHz晶振CMX-309FAB 22.5792MB晶振22.5792MHz晶振CMX309FBC11.2896M-UT晶振11.2896MHz晶振CMX309FLC16.384M-UT晶振16.384MHz石英晶振 CMX309FLC5.000MT晶振5MHz晶振CMX309FBC1.000MTR晶振1MHz晶振CMX309FBC11.2896M-UT晶振11.2896MHz晶振CMX309FLC17.734475M-UT晶振17.734475MHz石英晶振 CMX309FLC6.000MT晶振6MHz晶振CMX309FBC1.000MTR晶振1MHz晶振CMX309FBC12.000M-UT晶振12MHz晶振CMX309FLC17.734475M-UT晶振17.734475MHz石英晶振 CMX309FLC6.000MT晶振6MHz晶振CMX309FBC1.544MTR晶振1.544MHz晶振CMX309FBC12.000M-UT晶振12MHz晶振CMX309FLC18.000M-UT晶振18MHz石英晶振 CMX309FLC6.144MT晶振6.144MHz晶振CMX309FBC1.544MTR晶振1.544MHz晶振CMX309FBC12.288M-UT晶振12.288MHz晶振CMX309FLC18.000M-UT晶振18MHz石英晶振 CMX309FLC6.144MT晶振6.144MHz晶振CMX309FBC1.8432MTR晶振1.8432MHz晶振CMX309FBC12.288M-UT晶振12.288MHz晶振CMX309FLC18.432M-UT晶振18.432MHz石英晶振 CMX309FLC7.3728MT晶振7.3728MHz晶振CMX309FBC1.8432MTR晶振1.8432MHz晶振CMX309FBC14.31818M-UT晶振14.31818MHz晶振CMX309FLC18.432M-UT晶振18.432MHz石英晶振 CMX309FLC7.3728MT晶振7.3728MHz晶振CMX309FBC2.000MTR晶振2MHz晶振CMX309FBC14.31818M-UT晶振14.31818MHz晶振CMX309FLC19.6608M-UT晶振19.6608MHz石英晶振 CMX309FLC8.000MT晶振8MHz晶振CMX309FBC2.000MTR晶振2MHz晶振CMX309FBC14.7456M-UT晶振14.7456MHz晶振CMX309FLC19.6608M-UT晶振19.6608MHz石英晶振 CMX309FLC8.000MT晶振8MHz晶振CMX309FBC2.048MTR晶振2.048MHz晶振CMX309FBC14.7456M-UT晶振14.7456MHz晶振CMX309FLC20.000M-UT晶振20MHz石英晶振 CMX309FLC8.192MT晶振8.192MHz晶振

CMX309晶振产品参数表

CMX309FBC2.048MTR晶振2.048MHz晶振CMX309FBC16.000M-UT晶振16MHz晶振CMX309FLC20.000M-UT晶振20MHz石英晶振 CMX309FLC8.192MT晶振8.192MHz晶振CMX309FBC2.4576MTR晶振2.4576MHz晶振CMX309FBC16.000M-UT晶振16MHz晶振CMX309FLC22.1184M-UT晶振22.1184MHz石英晶振CMX309FLC9.8304MT晶振9.8304MHz晶振CMX309FBC2.4576MTR晶振2.4576MHz晶振CMX309FBC16.384M-UT晶振16.384MHz晶振CMX309FLC22.1184M-UT晶振22.1184MHz石英晶振 CMX309FLC9.8304MT晶振9.8304MHz晶振CMX309FBC3.6864MTR晶振3.6864MHz晶振CMX309FBC16.384M-UT晶振16.384MHz晶振CMX309FLC24.000M-UT晶振24MHz石英晶振 CMX309FLC10.000MT晶振10MHz晶振CMX309FBC3.6864MTR晶振3.6864MHz晶振CMX309FBC18.432M-UT晶振18.432MHz晶振CMX309FLC24.000M-UT晶振24MHz石英晶振 CMX309FLC10.000MT晶振10MHz晶振CMX309FBC4.000MTR晶振4MHz晶振CMX309FBC18.432M-UT晶振18.432MHz晶振CMX309FLC24.576M-UT晶振24.576MHz石英晶振 CMX309FLC11.000MT晶振11MHz晶振CMX309FBC4.000MTR晶振4MHz晶振CMX309FBC20.000M-UT晶振20MHz晶振CMX309FLC24.576M-UT晶振24.576MHz石英晶振 CMX309FLC11.000MT晶振11MHz晶振CMX309FBC5.000MTR晶振5MHz晶振CMX309FBC20.000M-UT晶振20MHz晶振CMX309FLC25.000M-UT晶振25MHz石英晶振 CMX309FLC11.0592MT晶振11.0592MHz晶振

CMX309晶振产品包装表

CMX309FBC5.000MTR晶振5MHz晶振CMX309FBC24.000M-UT晶振24MHz晶振CMX309FLC25.000M-UT晶振25MHz石英晶振 CMX309FLC11.0592MT晶振11.0592MHz晶振CMX309FBC8.000MTR晶振8MHz晶振CMX309FBC24.000M-UT晶振24MHz晶振CMX309FLC25.175M-UT晶振25.175MHz石英晶振 CMX309FLC11.2896MT晶振11.2896MHz晶振CMX309FBC8.000MTR晶振8MHz晶振CMX309FBC24.576M-UT晶振24.576MHz晶振CMX309FLC25.175M-UT晶振25.175MHz石英晶振 CMX309FLC11.2896MT晶振11.2896MHz晶振CMX309FBC8.192MTR晶振8.192MHz晶振CMX309FBC24.576M-UT晶振24.576MHz晶振CMX309FLC27.000M-UT晶振27MHz石英晶振 CMX309FLC12.000MT晶振12MHz晶振CMX309FBC8.192MTR晶振8.192MHz晶振CMX309FBC25.000M-UT晶振25MHz晶振CMX309FLC27.000M-UT晶振27MHz石英晶振 CMX309FLC12.000MT晶振12MHz晶振CMX309FBC9.8304MTR晶振9.8304MHz晶振CMX309FBC25.000M-UT晶振25MHz晶振CMX309FLC28.322M-UT晶振28.322MHz石英晶振 CMX309FLC12.288MT晶振12.288MHz晶振